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  Datasheet File OCR Text:
 MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3
Preferred Devices
Surface Mount Schottky Power Rectifier
. . . employing the Schottky Barrier principle in a large area metal-to-silicon power diode. State-of-the-art geometry features epitaxial construction with oxide passivation and metal overlay contact. Ideally suited for low voltage, high frequency rectification, or as free wheeling and polarity protection diodes, in surface mount applications where compact size and weight are critical to the system.
http://onsemi.com
* * * * * *
Small Compact Surface Mountable Package with J-Bend Leads Rectangular Package for Automated Handling Highly Stable Oxide Passivated Junction Very Low Forward Voltage Drop (0.5 Volts Max @ 3.0 A, TJ = 25C) Excellent Ability to Withstand Reverse Avalanche Energy Transients Guardring for Stress Protection
SCHOTTKY BARRIER RECTIFIERS 3.0 AMPERES 20, 30, 40, 60 VOLTS
Mechanical Characteristics:
* Case: Epoxy, Molded * Weight: 217 mg (approximately) * Finish: All External Surfaces Corrosion Resistant and Terminal * * * *
Leads are Readily Solderable Lead and Mounting Surface Temperature for Soldering Purposes: 260C Max. for 10 Seconds Shipped in 16 mm Tape and Reel, 2500 units per reel Polarity: Notch in Plastic Body Indicates Cathode Lead Marking: B32, B33, B34, B36
SMC CASE 403 PLASTIC
MARKING DIAGRAM
YWW B3x B3x x Y W = Device Code = 2, 3, 4 or 6 = Year = Work Week
MAXIMUM RATINGS
Please See the Table on the Following Page
ORDERING INFORMATION
Device MBRS320T3 MBRS330T3 MBRS340T3 MBRS360T3 Package SMC SMC SMC SMC Shipping 2500/Tape & Reel 2500/Tape & Reel 2500/Tape & Reel 2500/Tape & Reel
Preferred devices are recommended choices for future use and best overall value.
(c) Semiconductor Components Industries, LLC, 2000
1
October, 2000 - Rev. 3
Publication Order Number: MBRS340T3/D
MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3
MAXIMUM RATINGS
Rating Peak Repetitive Reverse Voltage Working Peak Reverse Voltage DC Blocking Voltage Average Rectified Forward Current Nonrepetitive Peak Surge Current (Surge applied at rated load conditions halfwave, single phase, 60 Hz) Operating Junction Temperature Symbol VRRM VRWM VR IF(AV) IFSM 80 MBRS320T3 20 MBRS330T3 30 MBRS340T3 40 MBRS360T3 60 Unit Volts
3.0 @ TL = 100C 4.0 @ TL = 90C 80 80 80
Amps Amps
TJ
- 65 to +125
- 65 to +125
- 65 to +125
C
THERMAL CHARACTERISTICS
Thermal Resistance -- Junction to Lead RJL 11 11 11 11 C/W
ELECTRICAL CHARACTERISTICS
Maximum Instantaneous Forward Voltage (Note 1.) (iF = 3.0 A, TJ = 25C) Maximum Instantaneous Reverse Current (Note 1.) (Rated dc Voltage, TJ = 25C) (Rated dc Voltage, TJ = 100C) 1. Pulse Test: Pulse Width = 300 s, Duty Cycle 2.0%. VF 0.50 iR 2.0 20 2.0 20 2.0 20 0.5 20 0.50 0.525 0.740 mA Volts
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2
MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3
i F , INSTANTANEOUS FORWARD CURRENT (AMPS) 100 50 TC = 100C I R , REVERSE CURRENT (mA) 20 10 5 2 1 0.5 0.2 0.1 0.05 0.02 0.01 0 TJ = 125C 100C 75C
3 2 1 0.7 0.5 0.3 0.2 0.1 0
TC = 25C
25C
0.07 0.05
0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0.9
1
1.1 1.2 1.3 1.4
4
8
12
16
20
24
28
32
36
40
vF, INSTANTANEOUS VOLTAGE (VOLTS)
VR, REVERSE VOLTAGE (VOLTS)
Figure 1. Typical Forward Voltage
PF(AV) , AVERAGE POWER DISSIPATION (WATTS)
Figure 2. Typical Reverse Current
5 TJ = 100C 4 3 2 1 0 (CAPACITIVE LOAD) IPK IAV
= 20
5 SQUARE WAVE DC
10
0
1
2
3
4
5
IF(AV), AVERAGE FORWARD CURRENT (AMPS)
Figure 3. Power Dissipation
I F(AV) , AVERAGE FORWARD CURRENT (AMPS)
10 9 8 7 6 5 4 3 2 1 0 40 50 60 70 80 90 100 110 120 130 140 SQUARE WAVE DC RATED VOLTAGE APPLIED RJC = 10.5C/W TJ = 125C
500 400 C, CAPACITANCE (pF) 300 200 100 0
TYPICAL CAPACITANCE AT 0 V = 480 pF TJ = 25C
0
4
8
12
16
20
24
28
32
36
40
TC, CASE TEMPERATURE (C)
VR, REVERSE VOLTAGE (VOLTS)
Figure 4. Current Derating (Case)
Figure 5. Typical Capacitance
http://onsemi.com
3
MBRS320T3, MBRS330T3, MBRS340T3, MBRS360T3
PACKAGE DIMENSIONS
S A
SMC PLASTIC PACKAGE CASE 403-03 ISSUE B
NOTES: 1. DIMENSIONING AND TOLERANCING PER ANSI Y14.5M, 1982. 2. CONTROLLING DIMENSION: INCH. 3. D DIMENSION SHALL BE MEASURED WITHIN DIMENSION P. INCHES DIM MIN MAX A 0.260 0.280 B 0.220 0.240 C 0.075 0.095 D 0.115 0.121 H 0.0020 0.0060 J 0.006 0.012 K 0.030 0.050 P 0.020 REF S 0.305 0.320 MILLIMETERS MIN MAX 6.60 7.11 5.59 6.10 1.90 2.41 2.92 3.07 0.051 0.152 0.15 0.30 0.76 1.27 0.51 REF 7.75 8.13
D
B
C J H
K
P
ON Semiconductor and are trademarks of Semiconductor Components Industries, LLC (SCILLC). SCILLC reserves the right to make changes without further notice to any products herein. SCILLC makes no warranty, representation or guarantee regarding the suitability of its products for any particular purpose, nor does SCILLC assume any liability arising out of the application or use of any product or circuit, and specifically disclaims any and all liability, including without limitation special, consequential or incidental damages. "Typical" parameters which may be provided in SCILLC data sheets and/or specifications can and do vary in different applications and actual performance may vary over time. All operating parameters, including "Typicals" must be validated for each customer application by customer's technical experts. SCILLC does not convey any license under its patent rights nor the rights of others. SCILLC products are not designed, intended, or authorized for use as components in systems intended for surgical implant into the body, or other applications intended to support or sustain life, or for any other application in which the failure of the SCILLC product could create a situation where personal injury or death may occur. Should Buyer purchase or use SCILLC products for any such unintended or unauthorized application, Buyer shall indemnify and hold SCILLC and its officers, employees, subsidiaries, affiliates, and distributors harmless against all claims, costs, damages, and expenses, and reasonable attorney fees arising out of, directly or indirectly, any claim of personal injury or death associated with such unintended or unauthorized use, even if such claim alleges that SCILLC was negligent regarding the design or manufacture of the part. SCILLC is an Equal Opportunity/Affirmative Action Employer.
PUBLICATION ORDERING INFORMATION
NORTH AMERICA Literature Fulfillment: Literature Distribution Center for ON Semiconductor P.O. Box 5163, Denver, Colorado 80217 USA Phone: 303-675-2175 or 800-344-3860 Toll Free USA/Canada Fax: 303-675-2176 or 800-344-3867 Toll Free USA/Canada Email: ONlit@hibbertco.com Fax Response Line: 303-675-2167 or 800-344-3810 Toll Free USA/Canada N. American Technical Support: 800-282-9855 Toll Free USA/Canada EUROPE: LDC for ON Semiconductor - European Support German Phone: (+1) 303-308-7140 (Mon-Fri 2:30pm to 7:00pm CET) Email: ONlit-german@hibbertco.com French Phone: (+1) 303-308-7141 (Mon-Fri 2:00pm to 7:00pm CET) Email: ONlit-french@hibbertco.com English Phone: (+1) 303-308-7142 (Mon-Fri 12:00pm to 5:00pm GMT) Email: ONlit@hibbertco.com EUROPEAN TOLL-FREE ACCESS*: 00-800-4422-3781 *Available from Germany, France, Italy, UK, Ireland CENTRAL/SOUTH AMERICA: Spanish Phone: 303-308-7143 (Mon-Fri 8:00am to 5:00pm MST) Email: ONlit-spanish@hibbertco.com Toll-Free from Mexico: Dial 01-800-288-2872 for Access - then Dial 866-297-9322 ASIA/PACIFIC: LDC for ON Semiconductor - Asia Support Phone: 303-675-2121 (Tue-Fri 9:00am to 1:00pm, Hong Kong Time) Toll Free from Hong Kong & Singapore: 001-800-4422-3781 Email: ONlit-asia@hibbertco.com JAPAN: ON Semiconductor, Japan Customer Focus Center 4-32-1 Nishi-Gotanda, Shinagawa-ku, Tokyo, Japan 141-0031 Phone: 81-3-5740-2700 Email: r14525@onsemi.com ON Semiconductor Website: http://onsemi.com For additional information, please contact your local Sales Representative.
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4
MBRS340T3/D


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